 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 160mA The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device. *Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics Description Features Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 : ID @TA=100 : IDM PD @TC=25 : 2 Ratings 600 f 30 160 100 300 0.83 0.5 1 -55 ~ +150 Unit V V mA mA mA W mJ A Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-a Value 150 Unit /W GC01L60 Page: 1/4 ISSUED DATE :2005/09/14 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 600 2.0 Typ. 0.8 0.8 5 1.5 0.7 8 5 13 9 260 20 3 3 Max. 4.0 D 100 10 100 12 8 420 L pF ns nC Unit V V/ : V S nA uA uA L Test Conditions VGS=0, ID=1mA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=0.5A 30V VGS= D VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=0.5A ID=0.5A VDS=480V VGS=10V VDD=300V ID=1A VGS=10V RG=10 L RD=300 L VGS=0V VDS=25V f=1.0MHz f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Total Gate Charge 3 3 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Source-Drain Diode Parameter Forward On Voltage3 Reverse Recovery Time3 Reverse Recovery Charge Symbol VSD Trr Qrr Min. Typ. 345 1 Max. 1.2 Unit V ns nC Test Conditions IS=160mA, VGS=0V IS=1A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=1mH, RG=25 L , IAS=1A. 3. Pulse width 300us, duty cycle 2%. GC01L60 Page: 2/4 ISSUED DATE :2005/09/14 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode GC01L60 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/09/14 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Drain Current v.s. Case Temperature Fig 10. Type Power Dissipation Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GC01L60 Page: 4/4 |
Price & Availability of GC01L60
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |